Factory Lead Time  

10 Weeks

Package / Case  

TO-236-3, SC-59, SOT-23-3

Mounting Type  

Surface Mount

Mount  

Surface Mount

Contact Plating  

Tin

Number of Pins  

3

Weight  

30mg

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.5V @ 250μA

Turn Off Delay Time  

35 ns

Power Dissipation (Max)  

500mW Ta

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Current - Continuous Drain (Id) @ 25℃  

900mA Ta

Published  

1997

Packaging  

Cut Tape (CT)

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

500mOhm

Additional Feature  

LOGIC LEVEL COMPATIBLE

Voltage - Rated DC  

-30V

Terminal Position  

DUAL

Terminal Form  

GULL WING

Current Rating  

-900mA

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

500mW

Turn On Delay Time  

8 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

300m Ω @ 1A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

135pF @ 15V

Gate Charge (Qg) (Max) @ Vgs  

3nC @ 4.5V

Rise Time  

16ns

Drain to Source Voltage (Vdss)  

30V

Vgs (Max)  

±20V

Fall Time (Typ)  

16 ns

Continuous Drain Current (ID)  

900mA

Threshold Voltage  

-800mV

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

0.9A

Drain to Source Breakdown Voltage  

-30V

Dual Supply Voltage  

-30V

Max Junction Temperature (Tj)  

150°C

Nominal Vgs  

-1.7 V

Width  

3.05mm

Height  

1.22mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free